?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc1675 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 50 ma p c collector power dissipation 250 mw tj junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 50 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 30 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 5 v i cbo collector cut-off current v cb =50v, i e =0 0.1 a i ebo emitter cut-off current v eb =5v, i c =0 0.1 a h fe dc current gain v ce =6v, i c =1ma 40 240 v be (on) base-emitter on voltage v ce =6v, i c =1ma 0.67 0.75 v v ce (sat) collector-emitter saturation voltage i c =10ma, i b =1ma 0.08 0.3 v f t current gain bandwidth product v ce =6v, i c =1ma 150 300 mhz c ob output capacitance v cb =6v, i e =0, f=1mhz 2.0 2.5 pf classification r o y h fe 40 ~ 80 70 ~ 140 120 ~ 240 ksc1675 fm/am rf amp, mix, conv,osc,if ? collector-base voltage : v ceo =30v ? high current gain bandwidth product : f t =300mhz (typ.) ? low collector capacitance : c ob =2.0pf (typ.) ? suffix ?-c? means center collector (1. emitter 2. collector 3. base) 1. emitter 2. base 3. collector to-92 1
?2001 fairchild semiconductor corporation ksc1675 rev. a1, june 2001 typical characteristics figure 1. static charactersitic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. input output capacitance figure 6. current gain bandwidth product 0 4 8 12162024 0 2 4 6 8 10 12 14 16 i b = 70ua i b = 60ua i b = 50ua i b = 40ua i b = 30ua i b = 20ua i b = 10ua i c [ma], collector current v ce [v], collector-emitter voltage 0.1 1 10 100 10 100 1000 10000 v ce = 6v h fe , dc current gain i c [ma], collector current 0.1 1 10 0.01 0.1 1 10 v be (sat) v ce (sat) i c =10i b v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000 v ce = 6v i c [ma], collector current v be (v),base-emitter voltage 0.1 1 10 100 0.1 1 10 f=1mhz i e =0 cob cib c ob [pf], capacitance v cb [v], collector-base voltage 0.1 1 10 100 10 100 1000 v ce =6v f t [mhz], current gain-bandwidth product i c [ma], collector current
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 ksc1675 dimensions in millimeters
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h3 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
product folder - fairchild p/n ksc1675 - npn epitaxial silicon transistor fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company ksc1675 npn epitaxial silicon transistor related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents features | applications | product status/pricing/packaging features l collector-base voltage : v ceo =30v l high current gain bandwidth product : f t =300mhz (typ.) l low collector capacitance : c ob =2.0pf (typ.) l suffix ?-c? means center collector (1. emitter 2. collector 3. base) back to top applications fm/am rf amp,mix,conv,osc,if back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging product product status pricing* package type leads packing method ksc1675crbu full production $0.05 to-92 3 bulk ksc1675ybu full production $0.05 to-92 3 bulk ksc1675rbu full production $0.05 to-92 3 bulk ksc1675cyta full production $0.05 to-92 3 tape reel ksc1675ota full production $0.05 to-92 3 tape reel ksc1675cobu full production $0.05 to-92 3 bulk ksc1675cybu full production $0.05 to-92 3 bulk KSC1675YS1TA full production $0.05 to-92 3 tape reel file:///e|/new/html/ksc1675.html (1 of 2) [7/27/02 11:05:15 am]
product folder - fairchild p/n ksc1675 - npn epitaxial silicon transistor ksc1675obu full production $0.05 to-92 3 bulk ksc1675yta full production $0.05 to-92 3 tape reel * 1,000 piece budgetary pricing back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///e|/new/html/ksc1675.html (2 of 2) [7/27/02 11:05:15 am]
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